無停電電源装置 (UPS)

...
Infrastructure-class Power Semiconductors Empower Next-gen UPS

Our expertise has been encapsulated into an array of optimized power semiconductors supporting key power stage topologies.

Complete End-to-End Supply Chain

Learn more about our full control of the SiC manufacturing value chain.

ソリューション

onsemi’s silicon carbide (SiC) and innovative packaging technologies are the gateway to improved density, reducing system losses and simplifying cooling thus improving overall system reliability across a wide range of mission critical UPS systems. Our system expertise has been encapsulated into an array of optimized power modules supporting all key power stage topologies along with power discretes and tailored isolated gate driver solutions. We recognize the critical nature of UPS systems so have formulated an "infrastructure-class" reliability framework. Our robust physical modeling delivers predictable simulation results that reflect real world operation, thus accelerates development time.

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UPS by Type

Offline & Online UPS

UPS and other energy-storage systems incorporating batteries can ensure continuous power availability for residential, telecommunications, data centers, industrial, medical, and other critical equipment.

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SiC Modules

Full SiC & Hybrid SiC Modules

Our package technologies optimized for

  • Superior performance
  • Lower thermal resistance than discrete devices
  • Easy to mount packages to fit industry standard pinouts
Hybrid Modules Full SiC Modules

onsemi SiC Diode Families

Family

Voltages

Opitmized For

Best Application

D1

View

650V, 1200V, 1700V

Large die size so low RTH and highest surge current ratings

  • Vienna rectifier input stages

More Details

D2

View

650V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

More Details

D3

View

1200V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

More Details

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    onsemi SiC MOSFET Families

    Family

    Voltages

    Opitmized For

    Best Application

    M1

    View

    1200V, 1700V

    Large die size so low RTH


    Balance between switching losses and conduction losses

    • DC-DC solid state relays
    • Traction & motor drives
    • Hard switching applications

    More Details

    M2

    View

    650V, 900V

    Lowest RDS(ON) for low speed applications

    • DC-DC solid state relays
    • Traction & motor drives

    More Details

    M3

    View

    1200V

    Fast switching applications with 15V-18V gate drive

    • Hard switching applications
    • LLC resonant applications

    More Details

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      Evaluation/Development Kits

      SECO-GDBB-GEVB

      The gate driver plug-and-play ecosystem allows for the comparison of the dynamic performance and capabilities of different gate drivers and technologies, such as for example NCD57XXX, NCP51561 or NCP51530.

      NCP-NCV51561TO2473LGEVB

      The NCP5156x are isolated dual−channel gate drivers with 4.5−A/9−A source and sink peak current respectively.

      NCP-NCV51563D2PAK7LGEVB

      NCP-NCV51563D2PAK7LGEVB is an evaluation board for the NCP/NCV51563. It consists of NCP51563 and 2 SiC MOSFETs in the standard D2PAK-7L package.

      SECO-HVDCDC1362-15W-GEVB

      SECO-HVDCDC1362-15W-GEVB is highly efficient and primary-side regulated (PSR) auxiliary power supply targeting HEV and EV automotive power trains.

      SECO-HVDCDC1362-40W-GEVB

      SECO-HVDCDC1362-40W-GEVB is highly efficient and primary-side regulated (PSR) auxiliary power supply targeting HEV and EV automotive power trains.

      SEC-3PH-11-OBC-EVB

      The SEC-3PH-11-OBC-EVB is a three-phase On Board Charger (OBC) reference design platform achieving state-of-the-art system efficiency with AEC qualified SiC power devices and drivers.

      Technical Documents

      Using Physical and Scalable Simulation Models to Evaluate Parameters and Application Results

      Physical and scalable modeling technique is an advanced SPICE modeling approach based on process and layout parameters which enables design optimization through a direct link between SPICE, physical design, and process technology.

      Reliability and Quality for IGBTs

      In today’s semiconductor marketplace two important elements for the success of a company are product quality and reliability.

      Engineering Essentials: Choosing Between Digital Isolators or Optocouplers

      As energy demand expands, current and voltage values also rise. Higher voltages are more common in many applications, even in standalone applications.

      Mounting Instructions for PIM Modules (Q0, Q1, Q2, F1, F2)

      This application note covers the mounting instructions for onsemi Power Integrated Modules (PIMs) using the following packages: Q0, Q1, Q2, F1, F2.

      High Efficiency DC-DC Converter Module

      The NCP12700 is fixed frequency, peak current mode PWM controller for single-ended switch mode power supplies (SMPS).

      Reading onsemi IGBT Datasheets

      The Insulated Gate Bipolar Transistor is a power switch well suited for high power applications such as motor control, UPS and solar inverters, and induction heating.

      Standard Gate-Driver Optocouplers

      The FOD31xx family of gate drivers functions as a power buffer to control the gate of a power MOSFET or IGBT.

      MOSFET Basics

      The Bipolar Power Transistor (BPT), as a switching device for power applications, had a few disadvantages. This led to the development of the power Metal Oxide Semiconductor Field Effect Transistor (MOSFET).

      onsemi M 1 1200 V SiC MOSFETs & Modules: Characteristics and Driving Recommendations

      This paper provides an overview on the key characteristics of onsemi M 1 1200 V SiC MOSFETs and how they can be influenced by the driving conditions. As part of the full wide bandgap ecosystem that onsemi offers, this article also provides a guideline on the usage of an isolated gate driver for SiC MOSFETs.

      Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices

      This paper describes how onsemi’s physically based, scalable SPICE models will take your simulation results to the next level, as a result, shorten your time to market.

      Galvanic Isolation Gate Driver Design Tips

      This application note describes some parameters, functions, and design tips of onsemi’s galvanic isolation gate drivers in system application.

      SiC MOSFETs: Gate Drive Optimization

      This paper highlights the unique device characteristics associated with SiC MOSFETs. Critical design requirements related to optimal gate−drive design for maximizing SiC switching performance and system level considerations will also be discussed.

      Power Packages Heat Sink Mounting Guide

      This document provides guidelines for mounting heat sinks for the proper thermal management. We describe heat-sink mounting methods, considerations, contact thermal resistance, and mounting torque for various packages.

      A Guideline on the Usage of an Isolated Gate Driver to Efficiently Drive SiC MOSFETs

      SiC MOSFETs have become a real alternative to using IGBTs in power applications. Isolated gate drivers are designed for the highest switching speeds and system size constrains required by technologies such as SiC by providing reliable control over IGBT and MOSFET. This application note focuses on optimization the design of gate driving voltage for speed to minimize switching losses and to get the full benefit of the devices.

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