急速DC EV 充電

Highly Optimized Technologies Enable Next-gen DC Fast Charging

Our technologies are crafted to meet demands of higher power and density DC fast charging.

25kW SiC Module Based DC Fast Charging System

onsemi helps you to develop a bidirectional DC fast charging/EVSE.

ソリューション

Our leading silicon carbide (SiC) technology and continuous innovation in packaging solutions help simplify the design process of EV chargers. With a comprehensive portfolio of discrete power and analog solutions, protections, sensing, and connectivity, onsemi offers high-quality components to tailor the system to your needs. Our system expertise has been fostered over the last 20 years while bringing together all these technologies to deliver well-rounded solutions.

25kW SiC Module Based DC Fast Charging System

Our system expert will guide you and highlight the key challenges, trade-offs, and compromises made, and show how to design, build and validate the charging system from scratch using our 25kW SiC module based DC fast charging system reference design.

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Full SiC & Hybrid SiC Modules

Our package technologies are optimized for superior performance, lower thermal resistance than discrete devices, and easy mounting packages that fit industry standard pinouts.

Hybrid Modules Full SiC Modules

Physical, Scalable SPICE Models to Accurately Predict Your Design Reality

Did you know that all SPICE Modelling is Not the same? Our SPICE models will take your simulation results to the next level, accelerating time to market.

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If you're interested to learn about any onsemi technology, search for related articles in help library.

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EliteSiC Diode Families

Family

Voltages

Optimization

Best Application

D1

Products

650V, 1200V, 1700V

Large die size so low RTH and highest surge current ratings

  • Vienna rectifier input stages

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D2

Products

650V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

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D3

Products

1200V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

More Details

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    EliteSiC MOSFET Families

    Family

    Voltages

    Optimization

    Best Application

    M1

    Products

    1200V, 1700V

    Large die size so low RTH


    Balance between switching losses and conduction losses

    • DC-DC solid state relays
    • Traction & motor drives
    • Hard switching applications

    More Details

    M2

    Products

    650V, 750V, 1200V

    Lowest RDS(ON) for low speed applications

    • DC-DC solid state relays
    • Traction & motor drives

    More Details

    M3

    Products

    1200V

    Fast switching applications with 15V-18V gate drive

    • Hard switching applications
    • LLC resonant applications

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      Evaluation/Development Kits

      SEC-25KW-SIC-PIM-GEVK

      Full SiC module-based 25kW DC EV charger platform.

      Explore Now

      SECO-HVDCDC1362-15W-GEVB

      15 W SiC High-Voltage Auxiliary Power Supply for HEV & BEV Applications.

      Explore Now

      SECO-GDBB-GEVB

      Gate drivers plug-and-play ecosystem

      Explore Now

      SECO-HVDCDC1362-40W-GEVB

      40 W SiC high-voltage auxiliary power supply for HEV & BEV applications

      Explore Now

      SECO-LVDCDC3064-IGBT-GEVB

      6 - 18 Vdc Input Isolated IGBT Gate Driver Supply +15 V / -7.5 V / 7.5 V with Automotive Qualified NCV3064 Controller

      Explore Now

      SECO-LVDCDC3064-SIC-GEVB

      6-18 Vdc Input Isolated SiC Gate Driver Supply +20V/-5V/5V with Automotive Qualified NCV3064 Controller Evaluation Board

      Explore Now

      Technical Documents

      Designing DC Fast Charges (DCFC) for Efficiency, Reliability, and Safety

      This paper will explain key DCFC design considerations and architectures to provide the highest efficiency, reliability and performance.

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      Lessons Learned: Developing a 25 kW DC Fast EV Charging Module

      In this deep dive into the development of onsemi’s 25 kW DC fast charging reference design for EVs, you will learn design tips and tricks from both hardware and firmware perspectives.

      Read More

      SiC Simulations

      This paper will explain simulation results that can be obtained only by simulation and how to use them in some high-power conversion topologies.

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      Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices

      This paper describes how onsemi’s physically based, scalable SPICE models will take your simulation results to the next level, as a result, shorten your time to market.

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      Using Physical and Scalable Simulation Models to Evaluate Parameters and Application Results

      Physical and scalable modeling technique is an advanced SPICE modeling approach based on process and layout parameters which enables design optimization through a direct link between SPICE, physical design, and process technology.

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      Fast DC EV Charging: Common Topologies and Power Devices Used in the System

      In this paper, we will discuss an overview of typical power converter topologies and power devices for the AC−DC and the DC−DC used in fast DC EV charging.

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      Electric Vehicle DC Fast Charging: Holistic Overview

      E−mobility and vehicle electrification buzz has been around for a while now. Strikingly enough, the first electric vehicles (EV) appeared in the late XIX century.

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      Thermal Management in Silicon Carbide (SiC) Designs

      This paper describes thermal management implications when it comes to using the Silicon Carbide (SiC).

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      Reliability and Quality for IGBTs

      In today’s semiconductor marketplace two important elements for the success of a company are product quality and reliability.

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      Effect of Gate-Emitter Voltage on Turn on Losses and Short Circuit Capability

      This application note describes some of the impacts of the gate-emitter voltage on the IGBT device performance.

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      Thermal Calculations for IGBTs

      IGBTs generally require a more complex set of calculations to determine the die temperatures than do most power semiconductors.

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      IGBT Basics

      This paper teaches you basic of IGBT such as it’s structure, gate drive basic and considerations, over−voltage and short circuit protection.

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      Engineering Essentials: Choosing Between Digital Isolators or Optocouplers

      As energy demand expands, current and voltage values also rise. Higher voltages are more common in many applications, even in standalone applications.

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      Mounting Instructions for PIM Modules (Q0, Q1, Q2, F1, F2)

      This application note covers the mounting instructions for onsemi Power Integrated Modules (PIMs) using the following packages: Q0, Q1, Q2, F1, F2.

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      High Efficiency DC-DC Converter Module

      The NCP12700 is fixed frequency, peak current mode PWM controller for single-ended switch mode power supplies (SMPS).

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      Reading onsemi IGBT Datasheets

      The Insulated Gate Bipolar Transistor is a power switch well suited for high power applications such as motor control, UPS and solar inverters, and induction heating.

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      Standard Gate-Driver Optocouplers

      The FOD31xx family of gate drivers functions as a power buffer to control the gate of a power MOSFET or IGBT.

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      MOSFET Basics

      The Bipolar Power Transistor (BPT), as a switching device for power applications, had a few disadvantages. This led to the development of the power Metal Oxide Semiconductor Field Effect Transistor (MOSFET).

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      Galvanic Isolation Gate Driver Design Tips

      This application note describes some parameters, functions, and design tips of onsemi’s galvanic isolation gate drivers in system application.

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      onsemi M 1 1200 V SiC MOSFETs & Modules: Characteristics and Driving Recommendations

      This paper provides an overview on the key characteristics of onsemi M 1 1200 V SiC MOSFETs and how they can be influenced by the driving conditions. As part of the full wide bandgap ecosystem that onsemi offers, this article also provides a guideline on the usage of an isolated gate driver for SiC MOSFETs.

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      SiC MOSFETs: Gate Drive Optimization

      This paper highlights the unique device characteristics associated with SiC MOSFETs. Critical design requirements related to optimal gate−drive design for maximizing SiC switching performance and system level considerations will also be discussed.

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      Power Packages Heat Sink Mounting Guide

      This document provides guidelines for mounting heat sinks for the proper thermal management. We describe heat-sink mounting methods, considerations, contact thermal resistance, and mounting torque for various packages.

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      A Guideline on the Usage of an Isolated Gate Driver to Efficiently Drive SiC MOSFETs

      SiC MOSFETs have become a real alternative to using IGBTs in power applications. Isolated gate drivers are designed for the highest switching speeds and system size constrains required by technologies such as SiC by providing reliable control over IGBT and MOSFET. This application note focuses on optimization the design of gate driving voltage for speed to minimize switching losses and to get the full benefit of the devices.

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      650 V Super-Junction MOSFET for High Efficiency and Reliable EV Charging Applications

      This document describes best in class body diode performance and low dynamic COSS loss of SUPERFET III FRFET. Due to the very low A·RDS(ON) of the SUPERFET III FRFET, it is highly optimized for the two−level FB LLC resonant converter for high power fast EV charging applications.

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      Videos