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Enable Next Gen BESS System Designs

Our long-term expertise and leading role in power management help to handle design challenges.

Complete End-to-End Supply Chain

Learn more about our full control of the SiC manufacturing value chain.

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onsemi’s long-term expertise and leading role in renewable energy generation, power management, and energy conversion helps customers across the globe handle the challenges of Energy Storage Systems. We create suitable solutions for the evolution of the power grid.

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25kW SiC Module Based DC Fast Charging System

Our system expert will guide you and highlight the key challenges, trade-offs, and compromises made, and show how to design, build and validate the charging system from scratch using our 25kW SiC module based DC fast charging system reference design.

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Full SiC & Hybrid SiC Modules

Our package technologies are optimized for superior performance, lower thermal resistance than discrete devices, and easy mounting packages that fit industry standard pinouts.

Hybrid Modules Full SiC Modules

Physical, Scalable SPICE Models to Accurately Predict Your Design Reality

Did you know that all SPICE Modelling is Not the same? Our SPICE models will take your simulation results to the next level, accelerating time to market.

Support and Updates

If you're interested to learn about any onsemi technology, search for related articles in help library.

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EliteSiC Diode Families

Family Products

Voltages

Optimization

Best Application

D1 Family

650 V, 1200 V, 1700 V

Large die size so low RTH and highest surge current ratings

  • Vienna rectifier input stages

More Details

D2 Family

650 V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

More Details

D3 Family

1200 V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

More Details

Show More

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    EliteSiC MOSFET Families

    Family Products

    Voltages

    Optimization

    Best Application

    M1 Family

    1200 V, 1700 V

    Large die size so low RTH


    Balance between switching losses and conduction losses

    • DC-DC solid state relays
    • Traction & motor drives
    • Hard switching applications

    More Details

    M2 Family

    650 V, 750 V, 1200 V

    Lowest RDS(ON) for low speed applications

    • DC-DC solid state relays
    • Traction & motor drives

    More Details

    M3 Family

    1200 V

    Fast switching applications with 15V-18V gate drive

    • Hard switching applications
    • LLC resonant applications

    More Details

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      Evaluation/Development Kits

      SECO-GDBB-GEVB

      The gate driver plug-and-play ecosystem allows for the comparison of the dynamic performance and capabilities of different gate drivers and technologies, such as for example NCD57XXX, NCP51561 or NCP51530.

      NCP-NCV51561TO2473LGEVB

      The NCP5156x are isolated dual−channel gate drivers with 4.5−A/9−A source and sink peak current respectively.

      NCP-NCV51563D2PAK7LGEVB

      NCP-NCV51563D2PAK7LGEVB is an evaluation board for the NCP/NCV51563. It consists of NCP51563 and 2 SiC MOSFETs in the standard D2PAK-7L package.

      SECO-HVDCDC1362-15W-GEVB

      SECO-HVDCDC1362-15W-GEVB is highly efficient and primary-side regulated (PSR) auxiliary power supply targeting HEV and EV automotive power trains.

      SECO-HVDCDC1362-40W-GEVB

      SECO-HVDCDC1362-40W-GEVB is highly efficient and primary-side regulated (PSR) auxiliary power supply targeting HEV and EV automotive power trains.

      SEC-3PH-11-OBC-EVB

      The SEC-3PH-11-OBC-EVB is a three-phase On Board Charger (OBC) reference design platform achieving state-of-the-art system efficiency with AEC qualified SiC power devices and drivers.

      Technical Documents

      Battery Energy Storage System Solution Guide

      BESS (Battery Energy Storage System) is widely employed in both residential and commercial cases.

      Energy Storage System Solutions

      More and more countries and companies have announced their strategies for achieving a low-carbon, sustainable world.

      Using Physical and Scalable Simulation Models to Evaluate Parameters and Application Results

      Physical and scalable modeling technique is an advanced SPICE modeling approach based on process and layout parameters which enables design optimization through a direct link between SPICE, physical design, and process technology.

      Reliability and Quality for IGBTs

      In today’s semiconductor marketplace two important elements for the success of a company are product quality and reliability.

      Engineering Essentials: Choosing Between Digital Isolators or Optocouplers

      As energy demand expands, current and voltage values also rise. Higher voltages are more common in many applications, even in standalone applications.

      Mounting Instructions for PIM Modules (Q0, Q1, Q2, F1, F2)

      This application note covers the mounting instructions for onsemi Power Integrated Modules (PIMs) using the following packages: Q0, Q1, Q2, F1, F2.

      High Efficiency DC-DC Converter Module

      The NCP12700 is fixed frequency, peak current mode PWM controller for single-ended switch mode power supplies (SMPS).

      Reading onsemi IGBT Datasheets

      The Insulated Gate Bipolar Transistor is a power switch well suited for high power applications such as motor control, UPS and solar inverters, and induction heating.

      Standard Gate-Driver Optocouplers

      The FOD31xx family of gate drivers functions as a power buffer to control the gate of a power MOSFET or IGBT.

      MOSFET Basics

      The Bipolar Power Transistor (BPT), as a switching device for power applications, had a few disadvantages. This led to the development of the power Metal Oxide Semiconductor Field Effect Transistor (MOSFET).

      onsemi M 1 1200 V SiC MOSFETs & Modules: Characteristics and Driving Recommendations

      This paper provides an overview on the key characteristics of onsemi M 1 1200 V SiC MOSFETs and how they can be influenced by the driving conditions. As part of the full wide bandgap ecosystem that onsemi offers, this article also provides a guideline on the usage of an isolated gate driver for SiC MOSFETs.

      Galvanic Isolation Gate Driver Design Tips

      This application note describes some parameters, functions, and design tips of onsemi’s galvanic isolation gate drivers in system application.

      Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices

      This paper describes how onsemi’s physically based, scalable SPICE models will take your simulation results to the next level, as a result, shorten your time to market.

      SiC MOSFETs: Gate Drive Optimization

      This paper highlights the unique device characteristics associated with SiC MOSFETs. Critical design requirements related to optimal gate−drive design for maximizing SiC switching performance and system level considerations will also be discussed.

      Power Packages Heat Sink Mounting Guide

      This document provides guidelines for mounting heat sinks for the proper thermal management. We describe heat-sink mounting methods, considerations, contact thermal resistance, and mounting torque for various packages.

      A Guideline on the Usage of an Isolated Gate Driver to Efficiently Drive SiC MOSFETs

      SiC MOSFETs have become a real alternative to using IGBTs in power applications. Isolated gate drivers are designed for the highest switching speeds and system size constrains required by technologies such as SiC by providing reliable control over IGBT and MOSFET. This application note focuses on optimization the design of gate driving voltage for speed to minimize switching losses and to get the full benefit of the devices.

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