onsemi is a registered ITAR supplier, and has also been granted Category 1A Trusted Design, Trusted Test, and Trusted Foundry accreditation for its on-shore fabrication facilities in Idaho and Oregon.
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We support Foundry projects with program managers, Customer Service Resources, and product marketing managers, from design engineering, through prototypes, and into production. Foundry experts in Europe and USA enable direct factory technical communications to ensure successful reticle generation, process integration, test development, yield enhancement, and prototype delivery.
An experienced group of professionals will quickly turn your geometric data into prototypes in the finished product form you require. Whether your need is for wafers, die, or tested package units, we have the streamlined prototype flow needed to keep your development project on schedule.
onsemi has >45 years of experience in the foundry business, maintains processes to accommodate customer needs, and supports long-life, high-quality products and long-term relationships. Combined with the company’s financial strength, this commitment enables customers to have confidence in long-term product sourcing decisions.
onsemi is affiliated with two multi-project houses – MOSIS and Europractice - providing prototyping and small-volume production services for VLSI circuit development, by aggregating multiple designs onto one mask. Mask generation, wafer fabrication and device packaging can be contracted through MOSIS and Europractice to onsemi.
Supplemental front-end services include probe and custom short flow wafer processing; and supplemental back-end services include backgrind, backmetal, packaging, test, and logistics.
Compare| Min Drawn Poly (µ) | 0.18 | Wafer Size (in) | 8 |
| No. Metal Layers | 4 - 6 | Operating Voltage (Vgs) | 1.8/3.3 |
| Metal 1 Pitch | 0.46 | Linear Cap | MIM |
| NVM | Yes | HV Devices (Vds) | 45/70 |
| N-Ch DMOS | Yes | Bi-polars | No |
| P-Ch DMOS | Yes | Trans Char | Salicide |
| Other Devices | Resistors |
| Min Drawn Poly (µ) | 0.18 | Wafer Size (in) | 8 |
| No. Metal Layers | 4 - 6 | Operating Voltage (Vgs) | 5/18 |
| Metal 1 Pitch | 0.46 | Linear Cap | MIM |
| NVM | Yes | HV Devices (Vds) | 18 |
| N-Ch DMOS | Yes | Bi-polars | No |
| P-Ch DMOS | Yes | Trans Char | Salicide |
| Other Devices | Resistors |
| Min Drawn Poly (µ) | 0.18 | Wafer Size (in) | 8 |
| No. Metal Layers | 4 - 6 | Operating Voltage (Vgs) | 1.8/5 |
| Metal 1 Pitch | 0.46 | Linear Cap | MIM |
| NVM | Yes | HV Devices (Vds) | 30 |
| N-Ch DMOS | Yes | Bi-polars | No |
| P-Ch DMOS | Yes | Trans Char | Salicide |
| Other Devices | Resistors |
| Min Drawn Poly (µ) | 0.18 | Wafer Size (in) | 8 |
| No. Metal Layers | 4 - 6 | Operating Voltage (Vgs) | 1.8/3.3 |
| Metal 1 Pitch | 0.46 | Linear Cap | MIM |
| NVM | Yes | HV Devices (Vds) | 15 |
| N-Ch DMOS | Yes | Bi-polars | No |
| P-Ch DMOS | Yes | Trans Char | Salicide |
| Other Devices | Resistors |
| Min Drawn Poly (µ) | 0.25 | Wafer Size (in) | 8 |
| No. Metal Layers | 2 - 5 | Operating Voltage (Vgs) | 2.5/3.3/5 |
| Metal 1 Pitch | 0.64 | Linear Cap | MIM |
| NVM | Yes | HV Devices (Vds) | 5 |
| N-Ch DMOS | No | Bi-polars | Yes |
| P-Ch DMOS | No | Trans Char | Salicide |
| Other Devices | Misc. |
| Min Drawn Poly (µ) | 0.25 | Wafer Size (in) | 8 |
| No. Metal Layers | 2 - 5 | Operating Voltage (Vgs) | 5/12 |
| Metal 1 Pitch | 0.64 | Linear Cap | MIM |
| NVM | Yes | HV Devices (Vds) | 40 |
| N-Ch DMOS | Yes | Bi-polars | Yes |
| P-Ch DMOS | Yes | Trans Char | Salicide |
| Other Devices | Misc. |
| Min Drawn Poly (µ) | 0.35 | Wafer Size (in) | 8 |
| No. Metal Layers | 3 - 5 | Operating Voltage (Vgs) | 3.3/5 |
| Metal 1 Pitch | 1.10 | Linear Cap | PIP |
| NVM | Yes | HV Devices (Vds) | 5 |
| N-Ch DMOS | No | Bi-polars | No |
| P-Ch DMOS | No | Trans Char | Salicide |
| Other Devices | Resistors |
| Min Drawn Poly (µ) | 0.35 | Wafer Size (in) | 8 |
| No. Metal Layers | 3 - 5 | Operating Voltage (Vgs) | 3.3/12 |
| Metal 1 Pitch | 1.00 | Linear Cap | MIM |
| NVM | Yes | HV Devices (Vds) | 18 |
| N-Ch DMOS | Ywa | Bi-polars | Yes |
| P-Ch DMOS | Yes | Trans Char | Salicide |
| Other Devices | Resistors |
| Min Drawn Poly (µ) | 0.35 | Wafer Size (in) | 6 & 8 |
| No. Metal Layers | 3 - 5 | Operating Voltage (Vgs) | 3.3 |
| Metal 1 Pitch | 1.00 | Linear Cap | MIM |
| NVM | Yes | HV Devices (Vds) | 40 |
| N-Ch DMOS | Yes | Bi-polars | Yes |
| P-Ch DMOS | Yes | Trans Char | Salicide |
| Other Devices | Misc. |
| Min Drawn Poly (µ) | 0.35 | Wafer Size (in) | 6 & 8 |
| No. Metal Layers | 3 - 5 | Operating Voltage (Vgs) | 3.3 |
| Metal 1 Pitch | 1.00 | Linear Cap | MIM |
| NVM | Yes | HV Devices (Vds) | 70 |
| N-Ch DMOS | Yes | Bi-polars | Yes |
| P-Ch DMOS | Yes | Trans Char | Salicide |
| Other Devices | Misc. |
| Min Drawn Poly (µ) | 0.6 | Wafer Size (in) | 8 |
| No. Metal Layers | 2 - 3 | Operating Voltage (Vgs) | 5/12 |
| Metal 1 Pitch | 1.50 | Linear Cap | PIP |
| NVM | Yes | HV Devices (Vds) | 20 |
| N-Ch DMOS | Yes | Bi-polars | No |
| P-Ch DMOS | Yes | Trans Char | Poly |
| Other Devices | Misc. |
onsemi offers qualified IP blocks developed by several partners, minimizing design risk, reducing development costs, and decreasing time-to-market. Please contact your local onsemi Sales Representative for additional information regarding IP blocks of interest.
Anatrix Integrated Circuits
AIP300 is a Total Ionizing Dose (TID) tolerant over 300KRad and Single Event Latch-Up (SEL) immune Digital Gate Library
IP PDF Technology: ONC18G/MS I4T 45v/70vAIP301 is a Total Ionizing Dose (TID) tolerant over 300KRad and Single Event Latch-Up (SEL) immune Place and Routable Digital Gate Library
IP PDF Technology: ONC18G/MS I4T 45v/70vAIP302s is a Single Event Latch-Up (SEL) immune Place and Routable Digital Gate Library
IP PDF Technology: ONC18G/MS I4T 45v/70vPLL QP RH is a Radiation Hardened by Design (RHBD) Phase Locked Loop utilizing a single reference clock and produces two user programmable output clocks
IP PDF Technology: ONC18G/MS I4T 45v/70v asicNorth
A single to differential level shifter from 1.8V to -15V and includes the -15V pad driver for driving the signal off chip.
IP PDF Technology: ONC18G/MS I4T 45v/70vA Dual Power-On Reset circuit used to sense the voltage levels of two power supplies. As the power supplies are ramped on, the ANPOR0400 monitors the voltage level on both and reports when the voltage has crossed into a functional operating range. After reporting that both power supplies are in the functional range, the ANPOR0400 latches the output signal high and enters an ultra-low power state.
IP PDF Technology: ONC18G/MS I4T 45v/70v Hexius Semiconductor
The HX11AA is a 12-bit, pseudo-differential 100ksps SAR analog-to-digital converter optimized to provide high accuracy conversion of analog signals into the digital domain. Options include a 16 channel input MUX.
IP PDF Technology: ONC18G/MS I4T 45v/70vThe HX11BA is a bandgap circuit providing a temperature independent reference voltage and 10 additional proportional to absolute temperature (PTAT) current sources. The HX11BA is also designed to connect and layout abut to the HX11Rx IP products.
IP PDF Technology: ONC18G/MS I4T 45v/70vThe HX11BB is a zero temperature coefficient (ZTC) current reference that provides temperature independent currents. The HX11BB has both current sink and current sources.
IP PDF Technology: ONC18G/MS I4T 45v/70vThe HX11DA is a 12-bit digital-to-analog converter that can accept an input frequency bandwidth of 100kHz. Optimized to provide high accuracy conversion of low bandwidth digital signals into the analog domain. Includes an output buffer capable of driving loads up to 100pF.
IP PDF Technology: ONC18G/MS I4T 45v/70vThe HX11PA is a power on reset (POR) circuitry block with complimentary release signals. The rising supply voltage threshold is approximately 2.1V. The falling voltage threshold is approximately 1.9V. The POR works with both fast and slow supply ramps.
IP PDF Technology: ONC18G/MS I4T 45v/70vThe HX11RA is a voltage regulator designed to provide a voltage reference or supply for on-chip circuitry. Various output voltages can be realized. Designed to connect and layout abut to the HX11BA bandgap IP which provides a 1.21V reference voltage and 24µA bias current for a compact structure.
IP PDF Technology: ONC18G/MS I4T 45v/70vThe HX11RB is a voltage regulator designed to provide a voltage reference to an external load. Various output voltages can be realized. Designed to connect and layout abut to the HX11BA bandgap IP which provides a 1.21V reference voltage and 24µA bias current for a compact layout structure.
IP PDF Technology: ONC18G/MS I4T 45v/70vThe HX11DB is a 7-bit digital to analog converter that is optimized to provide medium accuracy conversion of low bandwidth digital signals into the analog domain
IP PDF Technology: ONC18G/MS I4T 45v/70v
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