SRAM Memory | N25S818HA

シリアル SRAM メモリ、256-kb、1.8 V

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オン・セミコンダクターのシリアル SRAM ファミリには、内部的に 8 ビットで 32 k ワードとして編成されたこの 256 kb シリアル・アクセス静的ランダム・アクセス・メモリを含むいくつかの統合メモリ・デバイスが含まれています。これらのデバイスは、高度な CMOS テクノロジを使用して設計および製造され、高速性能と低電力の両方を提供します。デバイスはシングルチップ・セレクト (CS) 入力で動作し、シンプルなシリアル・ペリフェラル・インタフェース (SPI) シリアル・バスを使用します。単一のデータ入力およびデータ出力ラインがクロックとともに使用され、デバイス内のデータにアクセスします。N25S818HA デバイスには、デバイスへの通信を一時停止するための HOLD ピンが用意されています。一時停止中、入力遷移は無視されます。これらのデバイスは、−40°C ～ +85°C の広い温度範囲で動作可能で、いくつかの標準パッケージで提供されます。

  • 1.7 to 1.95 V power supply range
  • Very low standby current - typical Isb as low as 200 nA
  • Very low operating current - as low as 3 mA
  • Simple memory control: single chip select (CS), serial input (SI) and serial output (SO)
  • Flexible operating modes: word read and write, page mode (32 word page), and burst mode (full array)
  • 32 K x 8 bit organization
  • Self timed write cycles
  • Built-in write protection (CS high)
  • HOLD pin for pausing communication

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N25S818HAS21I

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CAD Model

Pb

A

H

P

SOIC-8

751AZ

3

260

TUBE

96

Y

Serial

256 kb

32k x 8

16

1.7

1.95

0.2

$1.1259

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N25S818HAT21I

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CAD Model

Pb

A

H

P

TSSOP-8

948S-01

3

260

TUBE

100

Y

Serial

256 kb

32k x 8

16

1.7

1.95

0.2

$1.1259

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信頼性データ

Die Related Summary Data

Device: N25S818HAS21I

Equivalent to wafer fab process: ONC18

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製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

ONC18

2

6465777234

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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