Current Protection | NIS5132

12 V 電子ヒューズ、eFuse

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Overview

NIS5132 は、費用効率が高くリセット可能なヒューズで、壊滅的障害とシャットダウン障害のいずれに対しても、ハード・ドライブなどの回路の信頼性を大幅に強化します。センシティブな回路を損傷する入力過電圧から負荷デバイスをバッファ化するよう設計されています。過電圧クランプ回路もあり、過渡時の出力電圧を制限しますが、ユニットのシャットダウンはしないため、動作は継続できます。

  • Mother Board Power Management

  • Hard Drives

  • Integrated Power Device
  • Internal Latching Thermally Protected
  • No External Current Shunt Required
  • 9V to 18V Input Range
  • Internal Charge Pump
  • Internal Undervoltage Lockout Circuit
  • Internal Overvoltage Clamp
  • ESD Ratings: Human Body Model (HBM); 1500V, Machine Model (MM); 200V
  • These are Pb-Free Devices
  • Auto Retry Option
  • 44 mohm Typical

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rDS(on) Max (mΩ)

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Reference Price

NIS5132MN1TXG

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CAD Model

Pb

A

H

P

DFN-10

485C

1

260

REEL

5000

Y

Latch Off

18

55

175

45

$0.4794

More Details

NIS5132MN2TXG

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CAD Model

Pb

A

H

P

DFN-10

485C

1

260

REEL

5000

Y

Auto-Retry

18

55

175

45

$0.4306

More Details

NIS5132MN3TXG

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Active, Not Rec

Similar Products
CAD Model

Pb

A

H

P

DFN-10

485C

1

260

REEL

5000

Y

Latch Off

18

55

175

45

$0.5303

More Details

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信頼性データ

Die Related Summary Data

Device: NIS5132MN2TXG

Equivalent to wafer fab process: HD3e

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

HD3e

0

8569312242

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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