IGBT/MOSFET Gate Drivers Optocouplers | FOD8342

3.0 A 出力電流、高速ゲートドライブ・オプトカプラ、延伸体 SOP 6 ピン・パッケージ

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Overview

FOD8342 シリーズは 3.0 A 出力電流、ゲートドライブ・オプトカプラで、中電力の IGBT/MOSFET を駆動することができます。モータ制御インバータ・アプリケーションや高性能電力システムに使用されるパワー IGBT/MOSFET の高速スイッチング駆動に最適です。FOD8342 シリーズは、8 mm の沿面/空間距離 (FOD8342T) を実現する延伸体パッケージと、最適化された IC 設計を活用して、高絶縁電圧および高ノイズ耐量の信頼性を高めています。FOD8342 シリーズの構成は、アルミニウムガリウムヒ素 (AlGaAs) 発光ダイオード (LED) が、プッシュプル MOSFET 出力段用高速ドライバ搭載集積回路に光結合されています。このデバイスは延伸体 6 ピン小型アウトライン・プラスチック・パッケージで提供されます。

  • AC and Brushless DC Motor Drives
  • Industrial Inverter
  • Uninterruptible Power Supply
  • Induction Heating
  • Isolated IGBT/Power MOSFET Gate Drive

  • FOD8342T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation
  • 3.0 A Peak Output Current Driving Capability for Medium-Power IGBT/MOSFET
    – Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail
  • 20 kV/µs Minimum Common Mode Rejection
  • Wide Supply Voltage Range: 10 V to 30 V
  • Fast Switching Speed Over Full Operating Temperature Range
    – 210 ns Maximum Propagation Delay
    – 65 ns Maximum Pulse Width Distortion
  • Under-Voltage Lockout (UVLO) with Hysteresis
  • Extended Industrial Temperate Range: -40°C to 100°C
  • Safety and Regulatory Approvals:
    – UL1577, 5,000 VACRMS for 1 Minute
    – DIN EN/IEC60747-5-5, 1,140V Peak Working Insulation Voltage

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IFLH (Max) (mA)

IDDL, IDDH (Max) (mA)

IOL, IOH (Min) (A)

tPHL, tPLH (Max) (ns)

PWD (Max) (ns)

VUVLO (Typ) (V)

VUVLO- (Typ) (V)

CMR (Min) (kV/µs)

VISO (Min) (V)

TOPR (Min) (°C)

TOPR (Max) (°C)

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FOD8342

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CAD Model

Pb

A

H

P

SOIC-6

751EL

1

260

TUBE

2000

N

7.5

4

2.5

210

65

8.3

7.7

20

5000

-40

100

$0.5067

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FOD8342R2

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CAD Model

Pb

A

H

P

SOIC-6

751EL

1

260

REEL

1000

N

7.5

4

2.5

210

65

8.3

7.7

20

5000

-40

100

$0.5277

More Details

FOD8342R2V

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CAD Model

Pb

A

H

P

SOIC-6

751EL

1

260

REEL

1000

N

7.5

4

2.5

210

65

8.3

7.7

20

5000

-40

100

$0.5347

More Details

FOD8342T

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CAD Model

Pb

A

H

P

SOIC6 W

751EM

1

260

TUBE

2000

N

7.5

4

2.5

210

65

8.3

7.7

20

5000

-40

100

$0.5067

More Details

FOD8342TR2

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CAD Model

Pb

A

H

P

SOIC6 W

751EM

1

260

REEL

1000

N

7.5

4

2.5

210

65

8.3

7.7

20

5000

-40

100

$0.5277

More Details

FOD8342TR2V

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CAD Model

Pb

A

H

P

SOIC6 W

751EM

1

260

REEL

1000

N

7.5

4

2.5

210

65

8.3

7.7

20

5000

-40

100

$0.5347

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FOD8342TV

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CAD Model

Pb

A

H

P

SOIC6 W

751EM

1

260

TUBE

2000

N

7.5

4

2.5

210

65

8.3

7.7

20

5000

-40

100

Price N/A

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FOD8342V

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CAD Model

Pb

A

H

P

SOIC-6

751EL

1

260

TUBE

2000

N

7.5

4

2.5

210

65

8.3

7.7

20

5000

-40

100

$0.5136

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信頼性データ

Die Related Summary Data

Device: FOD8342

Equivalent to wafer fab process: BB,GA

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BB,GA

0

58865369

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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