Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80mohm, 1200 V, M1, TO247−3L

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Overview

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • PFC
  • LLC

  • Automotive DC/DC converter for EV/PHEV
  • Automotive On Board Charger
  • Automotive Auxiliary Motor Drive

  • High Speed Switching and Low Capacitance
  • 1200V rated
  • Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
  • 100% UIL Tested
  • Qualified for Automotive According to AEC−Q101

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Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

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Tj Max (°C)

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NVHL080N120SC1A

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CAD Model

Pb

A

H

P

TO-247-3LD

1

260

TUBE

450

M1

1200

31

80

56

80

175

$8.1184

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