Silicon Carbide (SiC) MOSFETs | NVH4L200N170M1

Silicon Carbide (SiC) MOSFET – EliteSiC, 192 mohm, 1700 V, M1, TO-247-4L

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with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 20V gate drive but also works well with 18V gate drive.

  • Flyback converter
  • DC-DC
  • OBC

  • Automotive EV/HEV

  • 18V to 20V Gate Drive
  • New 1700V M1 technology: 192mohm RDS(ON) with low EON and EOFF losses
  • 100% Avalanche Tested

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ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

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NVH4L200N170M1

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Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

F

M1

1700

13

192

31

33

175

Price N/A

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