Silicon Carbide (SiC) MOSFETs | NTHL080N120SC1

Silicon Carbide MOSFET、Nチャネル、1200 V、80 mΩ、TO247−3L

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Overview

Silicon Carbide (SiC) MOSFET は、シリコンに比べて 優れた スイッチング性能 と 高い信頼性 を実現する 新しい技術を採用しています。さらに、オン抵抗の低減およびコンパクトなチップ サイズにより、 低 容量 と ゲート 電荷 を保証します。 その結果、システムの利点として、最高の効率、高速動作周波数、電力密度の増加、EMIの削減、システムサイズの縮小が含まれます。

  • PFC
  • Boost Inverter
  • PV Charging
  • Solar Inverter
  • Network Power Supply
  • Server Power Supply
  • 1200V rated
  • Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
  • High Speed Switching and Low Capacitance
  • 100% UIL Tested

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Blocking Voltage BVDSS (V)

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NTHL080N120SC1

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Pb

A

H

P

TO-247-3LD

340CX

NA

0

TUBE

450

N

M1

1200

44

80

56

80

175

Price N/A

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