Silicon Carbide (SiC) MOSFETs | NTHL080N120SC1

Silicon Carbide MOSFET、Nチャネル、1200 V、80 mΩ、TO247−3L

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Silicon Carbide (SiC) MOSFET は、シリコンに比べて 優れた スイッチング性能 と 高い信頼性 を実現する 新しい技術を採用しています。さらに、オン抵抗の低減およびコンパクトなチップ サイズにより、 低 容量 と ゲート 電荷 を保証します。 その結果、システムの利点として、最高の効率、高速動作周波数、電力密度の増加、EMIの削減、システムサイズの縮小が含まれます。

  • PFC
  • Boost Inverter
  • PV Charging

  • Solar Inverter
  • Network Power Supply
  • Server Power Supply

  • 1200V rated
  • Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
  • High Speed Switching and Low Capacitance
  • 100% UIL Tested

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NTHL080N120SC1

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Pb

A

H

P

TO-247-3LD

340CX

NA

0

TUBE

450

N

M1

1200

44

80

56

80

175

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Die Related Summary Data

Device: NTHL080N120SC1

Equivalent to wafer fab process: SIC

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FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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