Silicon Carbide (SiC) Diodes | FFSH50120A

SiC ダイオード、1200V、50A、TO-247-2

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Overview

シリコン・カーバイド (SiC) ショットキー・ダイオードは、 シリコンよりも優れたスイッチング性能と高い信頼性を実現する新しい技術を採用しています。逆回復電流がなく、温度から独立したスイッチング特性で、 優れた熱性能のシリコン・カーバイドは、次世代のパワー・セミコンダクターとなります。システムの利点には、最高の効率、高速動作周波数、電力密度の増加、EMI の削減、システムのサイズとコストの縮小が含まれます。

  • Industrial

  • UPS / ESS
  • Solar
  • EV Charger

  • Max Junction Temperature 175 °C
  • Avalanche Rated 441 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Family

Configuration

VRRM (V)

IF(ave) (A)

VF (Max)

IFSM (A)

IR (Max) (µA)

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FFSH50120A

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Active

CAD Model

Pb

A

H

P

TO-247-2

340CL

NA

0

TUBE

450

Y

D1

Single

1200

50

1.75

280

200

$11.8478

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信頼性データ

Die Related Summary Data

Device: FFSH50120A

Equivalent to wafer fab process: SIC

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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