Silicon Carbide (SiC) Diodes | FFSH50120A

SiC ダイオード、1200V、50A、TO-247-2

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Overview

シリコン・カーバイド (SiC) ショットキー・ダイオードは、 シリコンよりも優れたスイッチング性能と高い信頼性を実現する新しい技術を採用しています。逆回復電流がなく、温度から独立したスイッチング特性で、 優れた熱性能のシリコン・カーバイドは、次世代のパワー・セミコンダクターとなります。システムの利点には、最高の効率、高速動作周波数、電力密度の増加、EMI の削減、システムのサイズとコストの縮小が含まれます。

  • Industrial
  • UPS / ESS
  • Solar
  • EV Charger
  • Max Junction Temperature 175 °C
  • Avalanche Rated 441 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Configuration

VRRM (V)

IF(ave) (A)

VF (Max)

IFSM (A)

IR (Max) (µA)

Reference Price

FFSH50120A

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Active

CAD Model

Pb

A

H

P

TO-247-2

340CL

NA

0

TUBE

450

Y

D1

Single

1200

50

1.75

280

200

$11.8478

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