Small Signal MOSFETs | FQP19N20C

Power MOSFET、Nチャネル、QFET®、200 V、19A、170mΩ、TO-220

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Overview

このNチャネル拡張モードPower MOSFETはフェアチャイルド・セミコンダクター独自のプレーナストライプおよびDMOS技術を使用して製造されています。この高度なMOSFET技術は、オン抵抗を低減し、スイッチング性能とアバランシェエネルギー強度を向上させるよう構されています。これらのデバイスは、スイッチモード電源、アクティブ力率補正（PFC）、および電子ランプバラストに適しています。

  • その他のオーディオ&ビデオ
  • 照明用
  • 19A、200V、RDS(on) = 170mΩ(最大) @VGS = 10 V、ID = 9.5A
  • 少量のゲート電荷 (通常 40.5nC)
  • 低Crss (通常 85pF)
  • 100%電子なだれテスト済み

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQP19N20C

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

N-Channel

PowerTrench® T1

TO-220

Small Signal

Standard

0

Single

0

200

170

±30

4

19

139

-

-

-

40.5

830

22.5

1630

195

85

Price N/A

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