Small Signal MOSFETs | FDS6679

P チャネル PowerTrench® MOSFET、30V、-13A、9mΩ

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Overview

この P チャネル MOSFET は、同期または従来のスイッチング PWM コントローラーおよび充電器を使用して、DC/DC コンバーターの全体的な効率を改善するために特別に設計されています。これらの MOSFET は、同等の RDS(ON) 仕様を持つ他の MOSFET よりも高速なスイッチングおよび低ゲート電荷を特長としています。その結果、(非常に高い周波数でも) 駆動が容易で安全な MOSFET と、全体的な効率が向上した DC / DC 電源設計を実現します。

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  • -13 A、 -30 V。
  • RDS(ON) = 9 m Ω @ VGS = -10 V
  • RDS(ON) = 13 m Ω @ VGS = -4.5 V
  • バッテリー用途に対し、広いVGSS 範囲 (±25V)
  • 特に低いRDS(ON) のための、高性能トレンチ技術
  • 高い電力および電流処理能力

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS6679

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

-30

9

25

-3

-13

2.5

NA

-

16

71

NA

-

-

-

-

Price N/A

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