Small Signal MOSFETs | FDS2572

Nチャネル UltraFET Trench® MOSFET 150V、4.9A、47mΩ

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Overview

UltraFET®デバイスは、電力変換アプリケーションでベンチマーク効率を実現する特性を組み合わせています。これらのデバイスは、Rds（on）、低ESR、低トータルおよびミラーゲート電荷に最適化されており、高周波DC / DCコンバーターに最適です。

  • ă�“ă�®čŁ˝ĺ“�ă�Żĺ¤šć§�ă�Şç”¨é€”ă�«é�©ă�—ă�źć±Žç”¨ĺ“�ă�§ă�™ă€‚
  • DC/DC Converters
  • Telecom and Data-Com Distributed Power Architectures
  • 48-volt I/P Half-bridge/Full-Bridge
  • 24-volt Forward and Push-Pull Topologies
  • RDS(ON) = 0.040Ω (標準)、V
    = 10V
  • Qg(TOT) = 29nC (通常), VGS = 10V
  • 低Qrrボディーダイオード
  • 高周波数での効率を最大にする
  • UIS性能

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS2572

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Active

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Standard

0

Single

0

150

47

±20

4

4.9

2.5

-

-

-

4

2050

6

158

220

48

$0.7333

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