Small Signal MOSFETs | FDN86501LZ

N チャネル・シールド・ゲート PowerTrench® MOSFET 60 V、2.6 A、116 mΩ

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Overview

この N チャネル MOSFET は、シールドゲート技術を組み込んだ高度な PowerTrench® プロセスを使用して製造されています。このプロセスは、rDS(on)、スイッチング性能、堅牢性のために最適化されています。

  • Primary DC-DC Switch
  • Load Switch

  • シールドゲートMOSFET技術
  • 最大rDS(on) = 116 mΩ @ VGS = 10 V、ID = 2.6 A
  • 最大rDS(on) = 170 mΩ @ VGS = 4.5 V、ID = 2.1 A
  • 超低rDS(on)を実現する高性能トレンチ技術
  • 広く使われている表面実装パッケージ中の高電力および電流の処理機能
  • 高速スイッチング速度
  • UIL 100%テスト済み
  • RoHS 対応

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDN86501LZ

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Active

CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

60

116

±20

2.4

2.6

1.5

-

173

-

1.9

236

0.6

19

77

4.9

$0.7705

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信頼性データ

Die Related Summary Data

Device: FDN86501LZ

Equivalent to wafer fab process: T7

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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