Small Signal MOSFETs | FDD8778

N チャネル PowerTrench® MOSFET 25V、35A、14mΩ

Obsolete

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Overview

この N チャネル MOSFET は、同期または従来のスイッチング PWM コントローラを使用して、DC/DC コンバータの全体的な効率を改善するために特別に設計されています。低ゲート電荷、低 rDS(ON) 、高速スイッチング速度向けに最適化されています。

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  • 最大 rDS(on) = 14.0mΩ @ VGS = 10V、ID = 35A
  • 最大 rDS(on)このNチャンネルMOSFETは、同期または従来のスイッチングPWMコントローラーを使用して、DC/DCコンバーターの全体的な効率を改善できるように特に設計されています。 少量のゲート電荷、小rDS(on)、高速スイッチングスピードに最適化されています。 = 21.0m? @t VGS= 4.5V、ID = 33A
  • 少量のゲート電荷: Qg(TOT) = 12.6nC(通常)、VGS = 10V
  • 低ゲート抵抗
  • RoHS対応

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

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FDD8778

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Obsolete

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信頼性データ

Die Related Summary Data

Device: FDD8778

Equivalent to wafer fab process: T5

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T5

0

1599906359

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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