Small Signal MOSFETs | FDC6312P

デュアルPチャネル PowerTrench® MOSFET、1.8V仕様、-20V、-2.3A、115mΩ

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Overview

これらPチャネル1.8V仕様MOSFETは、優れたスイッチング性能のために低デート電荷を維持しながら、オン抵抗を最小限に抑えるように特別に構成された高度なPowerTrench®プロセスを使用して製造されます。

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  • -2.3 A、-20 V。
  • RDS(ON)=115mΩ@VGS=-4.5V
  • RDS(ON)=155mΩ@VGS=-2.5V
  • RDS(ON)=225mΩ@VGS=-1.8V
  • 超低RDS(ON)オンの高性能トレンチ技術。
  • SuperSOT™ -6 パッケージ: 標準のSO-8より72%小さいフット、低プロファイル (厚さ 1 mm)

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC6312P

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

P-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Dual

0

-20

-

8

-1.5

-2.3

0.96

Q1=Q2=155

Q1=Q2=115

-

4.4

467

-

-

-

-

$0.196

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Die Related Summary Data

Device: FDC6312P

Equivalent to wafer fab process: TT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TT

6

2104831460

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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