Small Signal MOSFETs | FQPF27P06

パワー MOSFET、P チャネル、QFET®、-60 V、-17 A、26 mΩ、TO-220F

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Overview

この P チャネル・エンハンスメントモード・パワー MOSFET は、当社独自のプレーナストライプおよび DMOS 技術を使用して製造されています。この高度な MOSFET 技術は、オン抵抗を低減し、スイッチング性能とアバランシェ・エネルギー強度を向上させるよう構成されています。これらのデバイスは、スイッチ・モード電源、オーディオ・アンプ、DC モータ制御、および可変スイッチング電源アプリケーションに適しています。

  • その他のオーディオ&ビデオ
  • -17A、-60V、RDS(on) = 26mΩ(最大) @VGS = -10 V、ID = -8.5A
  • 少量のゲート電荷 (通常 33nC)
  • 低Crss (通常 120pF)
  • 100%電子なだれテスト済み
  • 最大175℃の接合部温度定格

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQPF27P06

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Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

Y

P-Channel

PowerTrench® T1

TO-220

Small Signal

Standard

0

Single

0

-60

70

±25

-4

-17

47

-

-

-

33

1100

18

410

510

120

$0.7826

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