Low/Medium Voltage MOSFETs | FDD3690

100V N チャネル Power Trench® MOSFET 22A、64mΩ

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Overview

この N チャネル MOSFET は、同期または従来のスイッチング PWM コントローラを使用して、DC/DC コンバータの全体的な効率を改善するために特別に設計されています。これらの MOSFET は、同等の RDS(ON) 仕様を持つ他の MOSFET よりも高速なスイッチングおよび低ゲート電荷を特長としています。その結果、(非常に高い周波数でも) 駆動が容易で安全な MOSFET と、全体的な効率が向上した DC/DC 電源設計を実現します。

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  • 22 A、100V
  • RDS(ON)=64mΩ@VGS=10V
  • RDS(ON)=71mΩ@VGS=6V
  • 少量のゲート電荷(通常28nC)
  • 高速スイッチング
  • 特に低いRDS(ON)
    用の高性能トレンチ技術
  • 高い電力および電流処理能力

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD3690

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Standard

0

Single

0

100

36

±20

4

22

60

-

-

-

28

1514

5.4

-

82

44

$0.8694

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