Low/Medium Voltage MOSFETs | FDB045AN08A0

N チャネル PowerTrench® MOSFET 75 V、80 A、4.5 mΩ

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Overview

N チャネル PowerTrench® MOSFET 75 V、80 A、4.5 m Ω、最新のシールドゲート PowerTrench® MOSFET は、小型の QSYNC とソフト逆回復固有のボディ・ダイオードの性能を高速スイッチングと組み合わせ、同期整流の効率を大幅に改善することができます。

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  • ワークステーション
  • サーバー&メインフレーム
  • その他の産業用
  • 電動式自転車
  • RDS(on) = 3.9mΩ (通常) @VGS = 10V、ID = 80A
  • QG(tot) = 92nC (通常) @ VGS = 10V
  • 少量のミラー電荷
  • 低Qrrボディーダイオード
  • UIS機能 (単一パルスと反復パルス)
  • AEC Q101認定取得 旧開発型 82684

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB045AN08A0

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

Y

N-Channel

PowerTrench® T1

D2PAK

Low-Medium Voltage

Standard

0

Single

0

75

4.5

±20

4

80

310

-

-

-

92

6600

21

54

1000

240

$1.8066

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