High Voltage MOSFETs | FCI7N60

NチャネルSuperFET® MOSFET 600V、7A、600mΩ

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Overview

SuperFET® MOSFETは、非常に低いオン抵抗と少量のゲート電荷パフォーマンスを実現するための電荷バランス技術を利用する、フェアチャイルドセミコンダクターの第1世代の高電圧スーパージャンクション (SJ) MOSFETファミリーです。 この技術は導電損失を最小限に抑え、優れたスイッチング性能、dv/dtレート、および高い電子なだれエネルギーを提供するように設計されています。 その結果、SuperFET MOSFETは、PFC、サーバー/テレコム電源、FPD テレビの電源、ATX 電源と産業用電力アプリケーションなどのスイッチング電源アプリケーションに最適です。

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  • 650V @TJ = 150°C
  • 通常 RDS（on） = 530mΩ
  • 超少量のゲート電荷 (通常 Qg = 23nC )
  • 低実効出力容量 (通常 Coss.eff = 60pF)
  • 100%電子なだれテスト済み
  • RoHS対応

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCI7N60

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Active

CAD Model

Pb

A

H

P

I2PAK-3 / D2PAK-3 STRAIGHT LEAD

418AV

NA

0

TUBE

1000

Y

N-Channel

PowerTrench® T1

I2PAK-3

High Voltage

Standard

0

Single

0

600

600

±30

5

7

83

-

-

-

23

710

11.5

4500

380

34

$1.1762

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