IGBTs | HGTD1N120BNS

IGBT、1200V、NPT

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Overview

HGTD1N120BNS9A は非パンチ・スルー (NPT) IGBT 設計に基づいています。IGBT は、UPS、ソーラインバータ、モータ制御、電源など、低伝導損失が不可欠な中程度の周波数で動作する多くの高電圧スイッチング・アプリケーションに最適です。

  • 無停電電源装置

  • 2.7A、1200V、TC = 110°C
  • 低飽和電圧: VCE(sat) = 2.5V @ IC = 1.0A
  • 通常の立ち下がり時間...................258ns、TJ = 150°C
  • 短絡回路定格:
  • 低導電損失

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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HGTD1N120BNS9A

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

-

1200

2.7

2.5

-

0.09

0.07

-

-

14

8

10

60

No

$0.6237

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信頼性データ

Die Related Summary Data

Device: HGTD1N120BNS9A

Equivalent to wafer fab process: IGBT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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