IGBTs | FGH75T65SHDT

IGBT、650 V、75 A フィールドストップ・トレンチ

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Overview

当社の新シリーズのフィールドストップ第 3 世代 IGBT は、新しいフィールドストップ IGBT 技術を用いて、低伝導損失およびスイッチング損失が必要不可欠なソーラ・インバータ、UPS、溶接機、テレコム、ESS および PFC のアプリケーションに最適な性能を発揮します。

  • 最大接合部温度: TJ = 175°C
  • 簡単に並列操作するための正の温度係数
  • 高電流能力:
  • 低飽和電圧: VCE(sat) = 1.6 V（標準） @IC = 75 A
  • 部品はILM（1） 100％テスト済み
  • 高入力インピーダンス
  • 高速スイッチング
  • 厳格なパラメータ分布
  • RoHS に対応

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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FGH75T65SHDT-F155

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Active

CAD Model

Pb

A

H

P

TO-247-3

340CH

NA

0

TUBE

450

Y

-

650

-

-

1.8

0.75

3

76

-

123

-

-

455

-

$2.692

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信頼性データ

Die Related Summary Data

Device: FGH75T65SHDT-F155

Equivalent to wafer fab process: 3B,IJ

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

3B,IJ

0

1915930880

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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