IGBTs | FGD3N60LSD

IGBT、600V、3A、1.2V、DPAK、プレーナ

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Overview

当社の絶縁ゲート・バイポーラ・トランジスタ (IGBT) は、非常に低い伝導損失を提供します。このデバイスは、非常に低いオン電圧降下が機能として要求されるアプリケーション向けに設計されています。

  • 高電流能力:
  • 非常に低い飽和電圧: VCE(sat) = 1.2 V @ IC = 3 A
  • 高入力インピーダンス

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製品:

2

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Orderable Parts:

2

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGD3N60LSDTM

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

-

600

6

1.2

1.5

1

0.25

234

2.64

12.5

-

-

40

Yes

$0.4457

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FGD3N60LSDTM-T

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

-

600

6

-

1.5

1.9

0.3

234

2.64

12.5

-

-

40

-

Price N/A

More Details

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信頼性データ

Die Related Summary Data

Device: FGD3N60LSDTM

Equivalent to wafer fab process: 3B,IL

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

3B,IL

1

1920107056

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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