IGBTs | FGD3440G2_F085

IGBT、400V、25A、1.30V、335mJ、DPAKEcoSPARK® II、N チャネル・イグニション

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Overview

  • ボディエレクトロニクス

  • SCISエネルギー = 335mJ @ TJ = 25℃
  • ロジックレベルゲートドライブ
  • • AEC Q101認定取得
  • RoHS 対応

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGD3440G2-F085

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CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

-

400

-

-

-

-

-

2000

-

24

-

-

166

-

$0.9531

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信頼性データ

Die Related Summary Data

Device: FGD3440G2-F085

Equivalent to wafer fab process: IGN IGBT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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