General Purpose and Low VCE(sat) Transistors | D44H11

パワー・バイポーラ・トランジスタ、NPN、10 A、80 V

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Overview

これらのプラスチックの NPNおよびPNPパワートランジスタのシリーズは、スイッチングレギュレータ、コンバータ、パワーアンプのようなアプリケーションにおいて、出力ステージやドライバステージなどの汎用パワーアンプやスイッチングとして使用できます。

  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 1.0 V (Max) @ 8.0 A
  • Fast Switching Speeds
  • Complementary Pairs Simplifies Designs
  • Pb-Free Packages are Available

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Orderable Parts:

3

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

D44H11

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

NPN

General Purpose

1

10

80

-

-

-

-

40

-

-

50

Price N/A

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D44H11G

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Active

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

NPN

General Purpose

1

10

80

-

5

1.5

-

40

-

-

50

$0.4204

More Details

D44H11TU

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Last Shipments

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CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

NPN

General Purpose

1

10

80

-

5

1.5

-

40

-

-

50

Price N/A

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信頼性データ

Die Related Summary Data

Device: D44H11G

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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